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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V SO-8 T&R 2
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：11.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：34.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2162 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.38W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMT6006LSS-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±20V. The device exhibits a static drain-source on-resistance (RDS(ON)) of 6.5mΩ at VGS=10V and 10mΩ at VGS=4.5V. Continuous drain current (ID) reaches 14.6A at TA=+25°C and 11.9A at TA=+70°C when mounted on an FR-4 PCB with minimum recommended pad layout. Pulsed drain current (IDM) is rated at 110A. Total power dissipation (PD) is 1.38W under standard ambient conditions.
Feature Summary
- 100% Unclamped Inductive Switching (UIS) tested in production to ensure robust end-application reliability
- Designed for high-frequency switching and synchronous rectification applications
- Totally lead-free, fully RoHS compliant, and halogen/antimony free green device
Applications
- High-efficiency power management systems
- Synchronous rectification circuits
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm that the SO-8 case material utilizes the specified molded plastic compound with UL flammability classification rating 94V-0. Ensure procurement channels are authorized to maintain product integrity and warranty coverage.
Selection Notes
Select this component for designs requiring low on-state resistance and superior switching performance. Evaluate thermal requirements based on the junction-to-ambient thermal resistance of 90.3 °C/W for single-sided FR-4 PCB mounting. Consider the 110A pulsed current capability for transient load handling in power conversion topologies.
Part Context
This part belongs to the DMT6006LSS series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is housed in an SO-8 surface-mount package designed for efficient heat dissipation and automated assembly processes. The device integrates a body diode with a forward voltage of 1.2V maximum at IS=20A.
Replacement Considerations
Consult official manufacturer documentation for verified equivalent part numbers. Cross-referencing requires matching BVDSS, RDS(ON), ID ratings, and SO-8 pinout configurations to ensure functional compatibility without circuit redesign.
