DMT6007LFG-13

$0.36

Description：MOSFET N-CH 60V 15A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:b76eac54e754 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 15A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：15A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2090 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.2W (Ta), 62.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMT6007LFG-13

Overview

The DMT6007LFG-13 is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage (V_DSS) of 60 V and a maximum continuous drain current (I_D) of 80 A at case temperature of +25°C. The device exhibits a low on-state resistance (R_DS(ON)) of 6 mΩ max at V_GS = 10V and 8.5 mΩ max at V_GS = 4.5V. Total gate charge (Q_g) is 41.3 nC at V_GS = 10V. Thermal characteristics include a junction-to-case thermal resistance (R_θJC) of 2 °C/W.

Feature Summary

Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Features an excellent Figure of Merit (FOM) defined by the product of gate-drain charge and on-resistance.
Small form factor thermally efficient package enables higher density end products and occupies just 33% of board area compared to traditional packages.
Qualified to AEC-Q101 standards for high reliability and rated for 100% unclamped inductive switching (UIS).

Applications

Synchronous Rectifier
Backlighting
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the component meets RoHS compliance and halogen-free requirements if specified for the target assembly process. Ensure the procurement channel is authorized to guarantee authenticity and traceability of the semiconductor devices.

Selection Notes

Select this component when a compact footprint is required alongside high current handling capabilities up to 80A. The low R_DS(ON) values at both 10V and 4.5V gate drive voltages make it suitable for various logic-level and standard drive applications. Consider the thermal resistance parameters for heat dissipation planning in dense PCB layouts where space is limited.

Part Context

This part belongs to the DMT series of N-channel MOSFETs from Diodes Incorporated. It utilizes the proprietary PowerDI3333-8 package, which provides a small outline with enhanced thermal performance. The series is targeted at portable electronics and power management systems requiring high efficiency and minimal board space consumption.

Replacement Considerations

Direct substitutes within the same family include DMT6007LFG-7, which shares identical electrical specifications but differs in packaging quantity (2,000 units per tape and reel). Verify pinout compatibility and thermal characteristics when considering alternative manufacturers or different package types within the 60V N-channel category.