DMT6007LFG-7

$1.15

Description：MOSFET N-CH 60V 15A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e3d7d2004d84 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 15A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：15A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2090 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.2W (Ta), 62.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMT6007LFG-7

Overview

The DMT6007LFG-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a low on-state resistance (RDS(ON)) of 6mΩ at VGS=10V, or 8.5mΩ at VGS=4.5V. The device supports a continuous drain current (ID) of up to 80A at TC=+25°C. Packaged in the thermally efficient POWERDI3333-8 surface-mount format, it includes an avalanche-rated body diode with a forward voltage of 0.9V. Key dynamic parameters include a total gate charge of 41.3nC at VGS=10V and a turn-off fall time of 9.7ns.

Feature Summary

Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Small form factor thermally efficient package enables higher density end products and occupies just 33% of board area compared to traditional packages.
100% UIS (Unclamped Inductive Switching) rated for robust operation under avalanche conditions.
Qualified to AEC-Q101 standards for high reliability in automotive applications.

Applications

Synchronous Rectifier
Backlighting
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix when purchasing. The -7 suffix indicates a tape and reel packaging quantity of 2,000 units, whereas the -13 suffix denotes a 3,000-unit reel. Confirm that the required component matches the exact part number and packaging configuration specified in the design documentation before placing orders.

Selection Notes

Select this component for designs requiring a compact footprint with high current handling capabilities. The low RDS(ON) values at both 4.5V and 10V gate drive voltages make it suitable for various logic-level control interfaces. Ensure thermal management aligns with the specified junction-to-case thermal resistance for optimal performance in DC-DC converter topologies.

Part Context

This component belongs to the DMT60 series of N-channel MOSFETs from Diodes Incorporated. It utilizes the POWERDI3333-8 case style, which is characterized by its small physical dimensions and enhanced thermal dissipation properties. The series is engineered to balance low conduction losses with fast switching speeds, targeting modern power supply architectures.