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Product Detailed Parameters
- Description：MOSFET N-CH 60V 15A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：15A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：41.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2090 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.2W (Ta), 62.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMT6007LFGQ-7 is an N-channel enhancement mode MOSFET designed for automotive applications. It features a PowerDI3333-8 package and meets AEC-Q101 standards with PPAP capability. Key electrical parameters include a drain-source voltage (BVDSS) of 60V, a maximum continuous drain current (ID) of 80A at TC=+25°C, and a static drain-source on-resistance (RDS(ON)) of 6mΩ max at VGS=10V. The device operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Low RDS(ON) minimizes on-state losses for high-efficiency designs
- Excellent Qgd × RDS(ON) figure of merit (FOM)
- Small form factor thermally efficient package enables higher density end products
- 100% unclamped inductive switching test in production ensures robustness
Applications
- Brushless DC motor controls
- DC-DC converters
- Load switches
Procurement Notes
Verify the specific ordering suffix (-7 or -13) matches the required tape and reel quantity. Confirm that the component is sourced from authorized channels to ensure compliance with IATF 16949 manufacturing requirements. Check for RoHS and halogen-free status if environmental regulations apply to the final assembly.
Selection Notes
Select this component when automotive qualification and PPAP documentation are mandatory. The PowerDI3333-8 package offers a compact footprint suitable for space-constrained designs. Ensure the gate drive voltage supports the specified RDS(ON) thresholds at either 4.5V or 10V depending on the application's power efficiency requirements.
Part Context
This part belongs to the DMT6007LFGQ series from Diodes Incorporated. It is specifically engineered for the automotive sector, distinguishing itself through rigorous quality certifications like AEC-Q101. The series utilizes silicon technology to deliver reliable performance in demanding thermal and electrical environments typical of modern vehicle electronics.
Replacement Considerations
Consult official substitution lists for verified equivalents. Generic replacements may lack the necessary automotive certifications or PPAP documentation required for this specific application context.
