DMT6008LFG-13

$1.24

Description：MOSFET N-CH 60V 13A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a4eb433c12d4 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 13A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：13A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：50.4 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：2713 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.2W (Ta), 41W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

Download product information

DMT6008LFG-13

Overview

The DMT6008LFG-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of 60 V and a continuous drain current (ID) of 60 A at TC = +25°C. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 7.5 mΩ at VGS = 10V and 11.5 mΩ at VGS = 4.5V. Total gate charge (Qg) is 50.4 nC at VGS = 10V. It operates within a junction temperature range of -55°C to +150°C and utilizes the POWERDI3333-8 surface-mount package.

Feature Summary

Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management.
Small form factor thermally efficient package enables higher density end products, occupying just 33% of the board area compared to SO-8 packages.
Features an ESD protected gate and is rated for 100% Unclamped Inductive Switching (UIS).
Totally lead-free, fully RoHS compliant, halogen and antimony free, and qualified to AEC-Q101 standards.

Applications

Synchronous Rectifier
Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets the required environmental standards, including RoHS compliance and AEC-Q101 qualification, for the intended application environment. Ensure compatibility with the specified POWERDI3333-8 footprint during PCB layout.

Selection Notes

Select this component when a compact N-channel MOSFET with low RDS(ON) is required for space-constrained designs. The device is suitable for applications demanding high thermal efficiency and robust switching characteristics. Consider the 60V rating and 60A current capability relative to the system's peak load requirements and thermal dissipation constraints.

Part Context

This part belongs to the DMT6008LFG series from Diodes Incorporated, specifically utilizing the POWERDI3333-8 case style. It is an N-channel enhancement mode MOSFET designed for high-density power management solutions. The product line emphasizes minimized on-state losses and excellent switching performance through advanced semiconductor technology.

Replacement Considerations

The datasheet does not list confirmed substitute part numbers. Verify pinout compatibility and electrical parameters against alternative components before substitution.