DMT6009LFG-13

$0.36

Description：MOSFET N-CH 60V 11A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:7ea5881b9850 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 11A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta), 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33.5 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：1925 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.08W (Ta), 19.2W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMT6009LFG-13

Overview

The DMT6009LFG-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and utilizes the POWERDI3333-8 package. The device supports a continuous drain current of 34A at a case temperature of +25°C, or 11A at an ambient temperature of +25°C. Maximum on-state resistance is specified as 10mΩ at VGS=10V and 11.7mΩ at VGS=4.5V. Total power dissipation reaches 19.2W at TC=+25°C and 2.08W at TA=+25°C. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
Features an excellent figure of merit (Qgd x RDS(ON)) and advanced technology optimized for DC-DC converters.
Includes a small form factor thermally efficient package that enables higher density end products.
Rated for 100% Unclamped Inductive Switching (UIS) and qualified to AEC-Q101 standards for high reliability.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 3,000 units per reel. Confirm compliance with RoHS 2 and EU Directive 2002/95/EC requirements if halogen-free specifications are mandatory for your assembly process. Ensure the PowerDI3333-8 footprint matches your PCB layout guidelines before finalizing procurement orders.

Selection Notes

Select this component when a compact N-channel MOSFET with low on-resistance is required for space-constrained designs. The POWERDI3333-8 package provides thermal efficiency suitable for high-density boards. Verify that the 60V breakdown voltage and 34A current capacity align with your circuit's maximum operating conditions and load requirements.

Part Context

This part belongs to the DMT6009 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated under the PowerDI trademark. The product line focuses on providing low on-state resistance and high switching performance in small packages. The DMT6009LFG-13 variant specifically denotes the standard tape and reel packaging configuration for automated assembly processes.

Replacement Considerations

DMT6009LFG-7 serves as a direct functional substitute within the same family, differing only in its 2,000-unit tape and reel packaging quantity compared to the 3,000-unit quantity of the DMT6009LFG-13.