DMT6009LFG-7

$1.31

Description：MOSFET N-CH 60V 11A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2c3e539eb00e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 11A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta), 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33.5 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：1925 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.08W (Ta), 19.2W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

Download product information

DMT6009LFG-7

Overview

The DMT6009LFG-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of 60 V and a continuous drain current (ID) of 34 A at TC = +25°C. The static drain-source on-resistance (RDS(ON)) is rated at a maximum of 10 mΩ at VGS = 10 V with ID = 13.5 A, and 11.7 mΩ at VGS = 4.5 V with ID = 11.5 A. Total gate charge (Qg) is 33.5 nC at VGS = 10 V. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Qualified to AEC-Q101 standards for high reliability applications.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.
100% UIS (Avalanche) rated for robust operation under transient conditions.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The DMT6009LFG-7 variant utilizes a tape and reel configuration with a quantity of 2,000 units per reel. Confirm that the component meets all required environmental compliance standards, including RoHS and REACH directives, prior to integration into final assemblies.

Selection Notes

Select this component when a compact PowerDI3333-8 package is required for space-constrained designs. Ensure the application voltage does not exceed the 60 V drain-source breakdown rating. Verify that the gate drive voltage supports the specified RDS(ON) thresholds at either 4.5 V or 10 V depending on the target efficiency requirements.

Part Context

This part belongs to the DMT6009LFG series from Diodes Incorporated. It is housed in the POWERDI3333-8 surface-mount package, which provides a small form factor with thermal efficiency. The device is constructed using silicon technology and is intended for general-purpose switching applications requiring low conduction losses.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-referencing requires matching key electrical parameters such as V(BR)DSS, RDS(ON), and package dimensions to ensure functional compatibility without board redesign.