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Product Detailed Parameters
- Description：MOSFET N-CH 60V 74.5A TO251
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：74.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33.5 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：1925 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.9W (Ta), 83.3W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-251 (Type TH)
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
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Overview
The DMT6009LJ3 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a TO-251-3 (DPAK) through-hole package. The device features a drain-source breakdown voltage of 60 V and supports a continuous drain current of 74.5 A. Its maximum on-resistance is 12.8 mOhms, with a gate threshold voltage of 700 mV and a total gate charge of 33.5 nC. The component operates within a temperature range of -55 C to +150 C junction temperature and has a power dissipation rating of 83.3 W.
Feature Summary
- N-channel enhancement mode operation for efficient switching control
- Low on-resistance characteristic for reduced conduction losses
- High current handling capability suitable for power applications
- Robust thermal performance with extended operating temperature range
Applications
- DC-DC converter circuits
- Motor control systems
- Power management modules
Procurement Notes
Verify the specific manufacturer part number against official Diodes Incorporated documentation to confirm availability status. Note that some distributor records indicate this item may be discontinued or have restricted supply. Ensure the ordering suffix matches the required package type and tape/reel specifications before finalizing procurement orders.
Selection Notes
Select this component when a through-hole DPAK package is required for high-current applications. Compare the 12.8 mOhm on-resistance and 74.5 A current rating against circuit requirements. Verify that the TO-251-3 footprint aligns with the PCB design constraints and thermal management strategy.
Part Context
This part belongs to the DMT6009 series of N-channel MOSFETs from Diodes Incorporated. The series offers various package options including PowerDI and SO-8FL variants. The L suffix typically denotes a specific package configuration, while J3 indicates the TO-251-3 through-hole variant.
Replacement Considerations
Consult official Diodes Incorporated substitution guides for verified alternatives. Cross-reference parameters such as Rds(on), Id, and package dimensions to ensure compatibility.
