DMT6010LFG-7

$0.91

Description：MOSFET N-CH 60V 13A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c1a87624a3c2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 13A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：13A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2090 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.2W (Ta), 41W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

Download product information

DMT6010LFG-7

Overview

The DMT6010LFG-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI3333-8 surface-mount package with a drain-source voltage (VDS) of 60 V and a gate-source voltage (VGSS) rating of ±20 V. The device provides a maximum continuous drain current (ID) of 30 A at TC = +25°C, with a typical static drain-source on-resistance (RDS(ON)) of 7.5 mΩ at VGS = 10 V and 11.5 mΩ at VGS = 4.5 V. Total gate charge (QG) is 41.3 nC at VGS = 10 V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management.
Small form factor thermally efficient package enables higher density end products, occupying just 33% of the board area compared to SO-8 packages.
100% unclamped inductive switching (UIS) tested in production to ensure more reliable and robust end applications.

Applications

Synchronous Rectifier
Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets required environmental standards such as RoHS compliance and halogen-free status. Ensure the selected part number matches the exact thermal and electrical requirements of the target application design.

Selection Notes

Select this component based on its low RDS(ON) characteristics and excellent figure of merit (QGD x RDS(ON)). Consider the PowerDI3333-8 package size when board space is limited. Evaluate the thermal resistance parameters relative to the expected operating conditions and duty cycles to ensure adequate heat dissipation within the specified junction temperature range.

Part Context

This component belongs to the DMT60 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in the PowerDI3333-8 case style. The series is engineered for compact, high-density power solutions requiring efficient switching capabilities and low conduction losses in modern electronic designs.