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Product Detailed Parameters
- Description：MOSFET N-CH 60V 13.5A PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：13.5A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：41.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2090 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.2W (Ta), 113W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMT6010LPS-13 is a surface-mount N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a drain-source voltage of 60V and a gate-source voltage of ±20V. The device provides an on-resistance of 8mΩ at VGS=10V and 12mΩ at VGS=4.5V, both measured at ID=20A. Continuous drain current reaches 80A at TC=+25°C and 13.5A at TA=+25°C. Total power dissipation is rated at 113W at TC=+25°C and 2.2W at TA=+25°C. Thermal resistance from junction to case is 1.1°C/W, while junction-to-ambient is 57°C/W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Thermally efficient PowerDI5060-8 package with less than 1.1mm profile for thin applications
- Optimized low RDS(ON) to minimize on-state losses while maintaining superior switching performance
- Low input capacitance and fast switching speed characteristics
- Lead-free finish compliant with RoHS standards; halogen and antimony free
Applications
- Notebook battery power management
- DC-DC converters
- Load switches
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packing quantity and carrier type. Confirm that the component meets required environmental standards such as RoHS compliance and moisture sensitivity levels before procurement. Ensure the selected variant matches the intended thermal and electrical requirements for the target application design.
Selection Notes
Evaluate the trade-off between continuous drain current ratings at ambient versus case temperatures based on the available cooling solution. Consider the total gate charge and input capacitance values when designing the gate drive circuitry for optimal switching efficiency. Verify that the PCB layout accommodates the exposed drain pad for effective thermal dissipation through the PowerDI5060-8 package.
Part Context
This component belongs to the DMT6010 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. These devices are engineered to provide high conversion efficiency and low on-resistance within compact surface-mount packages. The series targets portable electronics and power management systems requiring robust thermal performance and space-saving form factors.
Replacement Considerations
Consult the manufacturer's automotive grade product listing for parts qualified to AEC-Q100/101/104/200 standards if automotive reliability is required. Verify pinout compatibility and thermal resistance specifications when substituting with other MOSFETs in similar voltage and current classes.
