DMT6010SCT

$1.65

Description：MOSFET N-CH 60V 98A TO220-3
Series：-
Mfr：Diodes Incorporated
Package：Tube

SKU:1c3b960b604d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 98A TO220-3
Series：-
Mfr：Diodes Incorporated
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：36.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1940 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.3W (Ta), 104W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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DMT6010SCT

Overview

The DMT6010SCT is a 60V N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a TO-220-3 package. It features a maximum drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 98A at +25°C case temperature. The device exhibits a maximum static drain-source on-resistance (RDS(ON)) of 7.2mΩ at VGS=10V and ID=20A. Key electrical parameters include a gate threshold voltage range of 2V to 4V, a total gate charge (QG) of 36.3nC, and a pulsed drain current capability of 160A. Thermal characteristics specify a junction-to-case thermal resistance (RθJC) of 1.2°C/W.

Feature Summary

100% unclamped inductive switching tested for enhanced reliability
Low input capacitance and low input/output leakage currents
Lead-free finish with RoHS compliance
Halogen and antimony free "Green" device construction

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the component meets all applicable RoHS directives and environmental standards required for your assembly process. Cross-reference the datasheet revision number to ensure compatibility with your design specifications and regulatory requirements before finalizing procurement.

Selection Notes

Select this component for applications requiring high efficiency power management due to its low on-resistance and fast switching capabilities. Ensure the thermal design accounts for the specified junction-to-case thermal resistance when operating near maximum current ratings. Verify that the gate drive voltage aligns with the threshold and on-resistance specifications to optimize performance within the safe operation area.

Part Context

This part belongs to the DMT series of N-channel MOSFETs designed for general-purpose power switching. The TO-220-3 package provides robust mechanical stability and thermal dissipation capabilities suitable for through-hole mounting. The device utilizes silicon technology optimized for low conduction losses and reliable operation in automotive and industrial environments.

Replacement Considerations

Consult the manufacturer's official documentation for verified equivalent parts or direct replacements. Do not substitute based solely on pinout compatibility; verify electrical parameters such as breakdown voltage, on-resistance, and thermal characteristics match or exceed the original specifications.