DMT6011LPDW-13

Overview

The DMT6011LPDW-13 is a dual N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a drain-source voltage of 60V and a maximum on-resistance of 14mΩ at VGS=10V, or 22mΩ at VGS=4.5V. Continuous drain current reaches 40A at TC=+25°C. The device includes ESD protected gates, wettable flanks for inspection, and operates within a temperature range of -55°C to +150°C.

Feature Summary

• Minimizes on-state resistance while maintaining superior switching performance
• Thermally efficient package design for cooler running applications
• Wettable flank construction facilitates improved optical inspection
• Gate protection diodes provide enhanced ESD protection

Applications

• Wireless Charging
• DC-DC Converters
• Power Management

Procurement Notes

Verify the specific datasheet revision (DS43097 Rev. 2 - 2) matches your design requirements. Confirm that the PowerDI5060-8/SWP (Type UXD) footprint aligns with your PCB layout guidelines. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under your operating conditions.

Selection Notes

Select this component when high-efficiency power management requires low conduction losses in a compact surface-mount form factor. The dual configuration supports bridge or half-bridge topologies. Verify gate drive voltage compatibility, as on-resistance varies significantly between 4.5V and 10V logic levels.

Part Context

This part belongs to Diodes Incorporated's PowerDI family, designed for space-constrained applications. It utilizes a molded plastic case with a copper leadframe and matte tin annealed terminal finish. The device is fully RoHS compliant and halogen-free, meeting environmental standards for modern electronics manufacturing.

Replacement Considerations

Consult official documentation for direct substitutes. Cross-referencing requires matching the 60V rating, dual N-channel topology, and PowerDI5060-8 package dimensions to ensure mechanical and electrical compatibility.

FAQ

Is the DMT6011LPDW qualified for automotive applications?

Standard production does not include AEC-Q100 qualification. Automotive-specific parts requiring change control and PPAP capability must be requested directly from Diodes Incorporated.

What is the maximum pulsed drain current?

The device supports a pulsed drain current of 160A with a 10µs pulse duration and 1% duty cycle.

How is the gate protected?

The internal schematic indicates integrated gate protection diodes are included to manage electrostatic discharge events.