DMT6011LSS-13

$0.18

Description：MOSFET BVDSS: 41V~60V SO-8 T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:5cffa433d08d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V SO-8 T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：10.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1072 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMT6011LSS-13

Overview

The DMT6011LSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and an SO-8 surface-mount package. The device provides a maximum on-resistance of 11mΩ at VGS=10V with a continuous drain current of 10.6A. Key electrical parameters include a gate threshold voltage of 1.4V to 2.5V, total gate charge of 22.2nC at VGS=10V, and input capacitance of 1072pF. Operating temperatures range from -55°C to +150°C.

Feature Summary

High conversion efficiency achieved through minimized on-state resistance.
Fast switching speed combined with low input capacitance for high-frequency applications.
Gate protected against electrostatic discharge (ESD).
Validated reliability via 100% unclamped inductive switching (UIS) testing.

Applications

High frequency switching circuits
Synchronous rectification systems
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS 2 and RoHS 3 directives as well as halogen-free requirements. Ensure the selected variant matches the required SO-8 mechanical dimensions and lead finish specifications for your assembly process.

Selection Notes

Select this component when a 60V N-channel MOSFET with low RDS(ON) is required for power management designs. Consider the thermal resistance values based on the intended PCB copper area and mounting method. Evaluate the gate charge and threshold voltage against the driving circuit capabilities to ensure optimal switching performance and minimize drive losses.

Part Context

This part belongs to the DMT6011LSS series of advanced silicon MOSFETs designed for high-efficiency power applications. Manufactured by Diodes Incorporated, it utilizes a standard SO-8 case with molded plastic compound. The product line emphasizes robust end-application reliability through comprehensive production testing protocols.

Replacement Considerations

Consult official manufacturer documentation for confirmed substitute part numbers. Verify pinout compatibility, voltage ratings, and thermal characteristics before substituting any alternative components.