DMT6012LFV-13

$0.21

Description：MOSFET N-CH 60V 43.3A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:57a6d2632d72 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 43.3A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：43.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1522 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.95W (Ta), 33.78W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8 (Type UX)
Package / Case：8-PowerVDFN

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DMT6012LFV-13

Overview

The DMT6012LFV-13 is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type UX) package. It features a drain-source voltage of 60 V and a continuous drain current of 43.3 A at TC = +25°C. The maximum on-resistance is 12 mΩ at VGS = 10V with ID = 20A, and 15 mΩ at VGS = 4.5V with ID = 12.5A. Total power dissipation reaches 33.78 W at TC = +25°C. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
Small form factor thermally efficient package enables higher density end products and occupies just 33% of the board area compared to SO-8.
Features an ESD protected gate and internal gate protection diode.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets RoHS compliance standards and is halogen-free. Ensure the requested part number matches the exact datasheet revision and electrical specifications required for the design.

Selection Notes

Select this component when low on-state resistance and compact footprint are critical requirements. The device offers robust thermal performance suitable for dense PCB layouts. Consider the 60V rating and 43.3A current capability against the specific load requirements of the target application circuit.

Part Context

This component belongs to the DMT6012 series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 package, which provides a lead-free, green molding compound construction. The series is engineered for general-purpose power management tasks requiring high reliability and small physical dimensions.

Replacement Considerations

Consult the official Diodes Incorporated datasheet or distributor cross-reference tools to identify verified substitute part numbers. Do not assume functional equivalence based solely on similar voltage or current ratings without verifying pinout and package compatibility.