DMT6012LPSW-13

$0.19

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:81daac0f5fb8 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：13.1A (Ta), 31.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1522 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 17.9W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMT6012LPSW-13

Overview

The DMT6012LPSW-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and a maximum continuous drain current of 31.5A at case temperature +25°C. The device exhibits a static drain-source on-resistance of 12mΩ at VGS=10V and 17mΩ at VGS=4.5V. Total gate charge reaches 22.2nC at VGS=10V, with an input capacitance of 1522pF. Thermal resistance from junction to case is 7.0°C/W, supporting total power dissipation up to 17.9W under optimal thermal conditions.

Feature Summary

Features wettable flank terminals designed to facilitate improved optical inspection during assembly.
Includes an integrated ESD protected gate structure for enhanced signal integrity.
Undergoes 100% unclamped inductive switching testing in production to ensure robustness.

Applications

Synchronous rectifier circuits
DC-DC converters
Power management systems

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component meets all applicable environmental directives relevant to your manufacturing region. Ensure that the supplier provides traceability documentation consistent with the manufacturer's quality standards. Cross-reference the datasheet revision number to guarantee compatibility with existing design specifications.

Selection Notes

Select this component when low on-state resistance is critical for minimizing conduction losses in high-efficiency designs. Evaluate the thermal performance requirements against the specified junction-to-case resistance. Consider the gate charge characteristics for driving circuit complexity and switching speed requirements. Verify that the package dimensions align with the target printed circuit board layout constraints.

Part Context

This part belongs to the DMT6012 series of N-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI5060-8 (SWP) package type, which is classified as Type UX. The series is engineered to balance low on-resistance with superior switching performance for modern power management applications.

Replacement Considerations

Consult the official Diodes Incorporated documentation for verified substitute part numbers within the same product family or equivalent specifications.