ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 60V 10.4A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：10.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1522 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Download product information
Overview
The DMT6012LSS-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 60 V and a continuous drain current (I_D) of 10.4 A at +25°C. The device offers a maximum on-resistance (R_DS(ON)) of 11 mΩ at V_GS = 10 V and 14 mΩ at V_GS = 4.5 V. Packaged in an SO-8 case, it supports a junction temperature range from -55°C to +150°C.
Feature Summary
- High conversion efficiency with minimized on-state resistance for reduced power losses
- Fast switching speed combined with low input capacitance for high-frequency operation
- ESD protected gate structure with integrated protection diode
- 100% unclamped inductive switching (UIS) tested in production
Applications
- High frequency switching circuits
- Synchronous rectification modules
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS 2 and RoHS 3 directives, including halogen and antimony-free requirements. Ensure the SO-8 package dimensions align with the target PCB footprint layout before finalizing procurement orders.
Selection Notes
Select this component when a 60 V rating and low R_DS(ON) are required for synchronous rectification or DC-DC converter designs. The SO-8 package provides a compact solution for surface-mount applications. Consider the thermal resistance values and operating temperature limits to ensure adequate heat dissipation within the specified -55°C to +150°C junction range.
Part Context
This part belongs to the DMT6012LSS series of advanced information N-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a standard SO-8 plastic case. The product line emphasizes robustness through UIS testing and compliance with environmental standards such as RoHS and REACH.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters, package type, and thermal characteristics to ensure functional compatibility without design modification.
