DMT6015LPDW-13

$0.26

Description：MOSFET 2N-CH 60V 9.4A PWRDI50
Series：-

SKU:ffe65f2bb2f8 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 9.4A PWRDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：9.4A (Ta), 17.1A (Tc)
Rds On (Max) @ Id, Vgs：18mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：808pF @ 30V
Power - Max：2.4W (Ta), 7.9W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：PowerDI5060-8 (Type UXD)
Grade：-
Qualification：-

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DMT6015LPDW-13

Overview

The DMT6015LPDW-13 is a dual N-channel enhancement mode MOSFET in a PowerDI5060-8/SWP package. It features a drain-source voltage of 60V and on-resistance of 18mΩ at VGS=10V, supporting 17.1A continuous current at TC=25°C. The device includes an ESD-protected gate, wettable flanks for inspection, and operates within a -55°C to +150°C junction temperature range.

Feature Summary

Dual N-channel configuration with integrated ESD protection for the gate terminal
Wettable flank design facilitating improved optical inspection during assembly
Thermally efficient PowerDI5060-8/SWP package construction
Validated 100% unclamped inductive switching (UIS) capability

Applications

Wireless charging systems
DC-DC converters
Power management circuits

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging format. Confirm that the component meets RoHS 3 compliance standards and halogen-free requirements as defined by the manufacturer's green product specifications before finalizing procurement orders.

Selection Notes

Select this component when a compact dual-N channel solution is required for high-efficiency power management. The low on-resistance minimizes conduction losses, while the fast switching speed supports high-frequency operation. Ensure thermal management aligns with the specified junction-to-case resistance limits.

Part Context

This part belongs to the DMT6015LPDW series manufactured by Diodes Incorporated. It utilizes the PowerDI®5060-8/SWP case style, which provides a robust surface-mount footprint. The device is designed to balance low static resistance with superior dynamic switching performance for modern electronic applications.

Replacement Considerations

Consult official documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters such as BVDSS, RDS(ON), and package dimensions to ensure functional compatibility without circuit modification.