DMT6015LPS-13

$0.77

Description：MOSFET N-CH 60V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c7a1ef92bb46 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：10.6A (Ta), 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18.9 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：1103 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.16W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMT6015LPS-13

Overview

The DMT6015LPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and a maximum gate-source voltage of ±16V. The device offers a typical on-resistance of 14.2mΩ at VGS=10V and 18mΩ at VGS=4.5V, supporting continuous drain currents of up to 31A at TC=+25°C. Packaged in a PowerDI5060-8 footprint with a profile under 1.1mm, it includes an integrated gate protection diode.

Feature Summary

Thermally efficient package design for cooler running applications
Low input capacitance enabling fast switching speeds
Integrated gate protection diode for enhanced reliability
Totally lead-free and fully RoHS compliant construction

Applications

Motor control systems
DC-DC converters
Notebook battery power management
Load switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the standard 2,500-unit tape and reel carrier. Confirm that the required package variant matches either the standard PowerDI5060-8 or the SWP (Type UX) configuration. Ensure compliance with moisture sensitivity level 1 requirements during storage and handling procedures.

Selection Notes

Select this component when a low-profile surface-mount solution is required for high-efficiency power conversion. The device is optimized for applications demanding minimized on-state losses while maintaining superior switching performance. Verify thermal resistance parameters against the specific PCB copper area and layout constraints used in the target design.

Part Context

This part belongs to the DMT6015 series of n-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the PowerDI5060-8 package family, which provides a compact form factor suitable for space-constrained electronics. The series is engineered to balance low conduction losses with robust switching characteristics.

Replacement Considerations

Consult official manufacturer documentation for confirmed substitute part numbers. Do not assume functional equivalence based solely on similar voltage or current ratings without verifying pinout compatibility and thermal specifications.