DMT6015LSS-13

$0.84

Description：MOSFET N-CH 60V 9.2A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8ed2515551fc Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 9.2A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：9.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18.9 nC @ 30 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：1103 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMT6015LSS-13

Overview

The DMT6015LSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage rating of ±16V. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 16mΩ at VGS=10V and 21mΩ at VGS=4.5V. Continuous drain current reaches 9.2A at TA=+25°C with VGS=10V, or 7.5A at VGS=4.5V. Total power dissipation is rated at 1.5W in steady state. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Features low input capacitance and fast switching speed characteristics.
Totally lead-free and fully RoHS compliant, containing no purposely added lead.
Manufactured as a halogen and antimony free "Green" device.

Applications

Load Switch
Adaptor Switch
Notebook PC

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the SO-8 package dimensions align with the target PCB footprint layout. Ensure thermal management strategies account for the specified thermal resistance values under actual operating conditions. Validate compliance requirements against project specifications before finalizing procurement.

Selection Notes

Select this component when a 60V N-channel MOSFET with low RDS(ON) is required for portable electronics. Consider the SO-8 package constraints and thermal dissipation limits. Evaluate gate drive voltage compatibility, noting distinct RDS(ON) ratings for 4.5V and 10V operations. Assess switching speed requirements against the documented dynamic characteristics.

Part Context

This part belongs to the DMT6015LSS series from Diodes Incorporated. It utilizes silicon technology housed in an SO-8 case constructed from molded plastic with a matte tin annealed finish over a copper leadframe. The device is classified as a single channel enhancement mode transistor designed for surface mount applications.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-reference electrical parameters such as BVDSS, RDS(ON), and package type to ensure functional equivalence. Verify pinout compatibility and thermal characteristics before implementing any alternative components.