DMT6016LJ3

$0.31

Description：MOSFET BVDSS: 41V-60V TO251
Series：-
Mfr：Diodes Incorporated
Package：Tube

SKU:3caad33d3411 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V-60V TO251
Series：-
Mfr：Diodes Incorporated
Package：Tube
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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DMT6016LJ3

Overview

The DMT6016LJ3 is a single N-Channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60 V drain-source breakdown voltage and a continuous drain current of 74.5 A at +25°C ambient temperature. The device exhibits a maximum on-resistance of 12.8 mΩ. It operates within a junction temperature range of -55°C to +150°C with a power dissipation rating of 83.3 W. The component utilizes a TO-251-3 package for surface-mount installation.

Feature Summary

High current handling capability suitable for power switching applications
Low on-resistance for efficient power management
Robust thermal performance with high power dissipation rating

Applications

DC-DC converter circuits
Motor control systems
Power distribution units

Procurement Notes

Verify the specific suffix and manufacturer details against official Diodes Incorporated documentation before procurement. Confirm that the component matches the required TO-251-3 package and electrical specifications. Ensure compliance with RoHS standards if applicable to the target assembly. Cross-reference part numbers to avoid confusion with similar series components.

Selection Notes

Select this component when high continuous current capacity is required in a compact surface-mount form factor. The low on-resistance minimizes conduction losses, improving overall system efficiency. Consider the thermal management requirements due to the significant power dissipation capabilities. Ensure the gate drive voltage aligns with the specified threshold characteristics for optimal switching performance.

Part Context

This component belongs to the Diodes Incorporated MOSFET portfolio, designed for general-purpose power switching. It integrates silicon technology into a standardized SMD package. The device supports modern electronics requiring reliable high-current control. It serves as a fundamental building block for various power conversion topologies.