DMT6017LDV-7

$0.29

Description：MOSFET 2N-CH 25.3 PWRDI3333
Series：-

SKU:6fd3c1e6f560 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 25.3 PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：25.3 (Tc)
Rds On (Max) @ Id, Vgs：22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PowerDI3333-8 (Type UXC)
Grade：-
Qualification：-

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DMT6017LDV-7

Overview

The DMT6017LDV-7 is a dual N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a drain-source voltage of 65 V and a maximum continuous drain current of 25.3 A at TC = +25°C. The on-state resistance is 22 mΩ max at VGS = 10V and 29 mΩ max at VGS = 4.5V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Dual configuration with integrated gate protection diodes for enhanced reliability
Optimized low on-resistance to minimize conduction losses
Fast switching speed supported by low input capacitance
Robust performance validated through 100% unclamped inductive switching testing

Applications

Wireless charging systems
DC-DC converters
Power management circuits

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and reel specifications. Ensure compliance with RoHS and halogen-free requirements as defined in the manufacturer's quality standards before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high efficiency power management within a compact surface-mount footprint. Evaluate thermal dissipation capabilities based on the specific PCB copper area and ambient conditions, as power ratings vary significantly between free-air and thermally biased mounting scenarios.

Part Context

This device belongs to the DMT6017 series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 (Type UXC) case style, designed to provide superior thermal performance and electrical characteristics compared to standard packages while maintaining a small physical profile.

Replacement Considerations

Consult the official datasheet for direct pin-compatible alternatives within the same series. Verify that any substitute part matches the 65 V rating, dual channel configuration, and PowerDI3333-8 package dimensions.