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Product Detailed Parameters
- Description：MOSFET N-CH 60V 9.2A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：9.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：18mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：864 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMT6017LSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 9.2A at TA = +25°C. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 18mΩ at VGS = 10V and ID = 10A, or 23mΩ at VGS = 4.5V and ID = 6A. Total gate charge (Qg) is 17nC at VGS = 10V. It operates within a junction temperature range of -55°C to +150°C and is housed in an SO-8 surface-mount package.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Totally lead-free and fully RoHS compliant, with halogen and antimony-free green device construction.
Applications
- Load Switch
- Adaptor Switch
- Notebook PC
Procurement Notes
Verify the complete part number including the suffix '-13' to confirm the specific tape and reel packaging configuration. Confirm that the required operating temperature range aligns with the specified -55°C to +150°C junction limits. Ensure the application circuit respects the absolute maximum ratings for drain-source voltage and continuous drain current under your specific thermal conditions.
Selection Notes
Select this component when a 60V N-channel MOSFET with low on-resistance is required for compact designs. The SO-8 package provides a balance between thermal dissipation and board space constraints. Consider the gate threshold voltage characteristics if driving directly from lower voltage logic levels, as RDS(ON) increases significantly at VGS = 4.5V compared to 10V.
Part Context
This component belongs to the DMT6017LSS series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series is engineered for general-purpose power switching applications requiring low conduction losses. The 'LSS' designation indicates the specific package type and electrical characteristics optimized for surface-mount assembly processes.
Replacement Considerations
Consult official manufacturer cross-reference lists for verified substitutes. Ensure any replacement maintains identical voltage, current, and thermal ratings. Verify pinout compatibility and package dimensions before implementation.
FAQ
What is the maximum continuous drain current at an ambient temperature of +70°C?
At an ambient temperature of +70°C, the maximum continuous drain current decreases to 7.4A when VGS is set to 10V.
Does the device support avalanche energy handling?
Yes, the datasheet specifies an avalanche energy rating (EAS) of 11.7 mJ based on a low frequency and duty cycle test condition with an inductance of 0.1mH.
