DMT6018LDR-7

$0.55

Description：MOSFET 2N-CH 60V 8.8A 8VDFN
Series：-

SKU:aa9382f695fe Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 8.8A 8VDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：8.8A (Ta)
Rds On (Max) @ Id, Vgs：17mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：869pF @ 30V
Power - Max：1.9W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：V-DFN3030-8
Grade：-
Qualification：-

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DMT6018LDR-7

Overview

The DMT6018LDR-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a V-DFN3030-8 (Type H) case with a maximum drain-source voltage of 60V and a continuous drain current of 8.8A at +25°C. The device exhibits a typical on-resistance of 17mΩ at VGS=10V and 26mΩ at VGS=4.5V. Total gate charge is 13.9nC at VGS=10V, with a thermal resistance junction-to-ambient of 66°C/W under steady-state conditions. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Dual N-channel configuration for compact power management designs
Low on-resistance optimized for high efficiency applications
Fast switching speed with low input capacitance
Totally lead-free and fully RoHS compliant

Applications

Power Management Functions
Analog Switch

Procurement Notes

Verify the specific ordering suffix '-7' against official documentation to confirm the 3000-unit tape and reel packaging format. Ensure the component matches the V-DFN3030-8 (Type H) physical dimensions and terminal finish specifications detailed in the datasheet before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel topology is required within a highly compact footprint. The 60V rating and 8.8A continuous current capability suit moderate power levels. Evaluate the 17mΩ on-resistance against system conduction loss requirements and verify that the 66°C/W thermal resistance aligns with the available PCB copper area for adequate heat dissipation.

Part Context

This part belongs to the DMT60 series of advanced MOSFETs designed to minimize on-state resistance while maintaining superior switching performance. It utilizes silicon technology and is housed in a molded plastic green molding compound package with UL flammability classification rating 94V-0.

Replacement Considerations

Consult the manufacturer's official documentation for verified substitute part numbers. Cross-reference pin configurations, electrical ratings, and package dimensions to ensure functional compatibility without circuit redesign.