DMT6030LFCL-7

$0.48

Description：MOSFET BVDSS: 41V~60V X1-DFN1616
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2ac609426e58 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V X1-DFN1616
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：639 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：780mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN1616-6 (Type K)
Package / Case：6-PowerUFDFN

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DMT6030LFCL-7

Overview

The DMT6030LFCL-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 60 V and a continuous drain current (I_D) of 6.5 A at +25°C ambient temperature. The device offers a maximum on-resistance (R_DS(ON)) of 25 mΩ at V_GS = 10 V and 34 mΩ at V_GS = 4.5 V. Total power dissipation is rated at 0.78 W in steady state on an FR-4 substrate, or 1.58 W with a 1-inch square copper plate. The component operates within a junction temperature range of -55°C to +150°C and utilizes a U-DFN1616-6 package.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Features a low profile construction with a 0.6mm height, suitable for space-constrained designs.
Utilizes a compact PCB footprint of 2.56mm² to optimize board real estate.
Constructed as a totally lead-free, fully RoHS compliant, halogen-free, and antimony-free green device.

Applications

Power Management Functions
Load Switch

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3,000 units per reel. Confirm that the U-DFN1616-6 case type matches the required mechanical constraints. Ensure compliance requirements align with the manufacturer's definitions for halogen-free and antimony-free status if applicable to the target market regulations.

Selection Notes

Select this component when a 60V rating and low R_DS(ON) are required for efficient power switching. Consider the thermal characteristics carefully; use the specified FR-4 substrate data for standard layouts or the copper plate data for enhanced heat sinking. Verify gate drive voltages against the 4.5V and 10V thresholds to ensure optimal conduction levels during operation.

Part Context

This part belongs to the DMT6030 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to balance low static losses with dynamic switching capabilities. The product line targets modern electronic systems requiring compact form factors and high thermal reliability in power distribution networks.

Replacement Considerations

Consult official documentation for direct substitutes. Cross-referencing requires matching the 60V rating, U-DFN1616-6 package dimensions, and electrical parameters such as R_DS(ON) and I_D limits to ensure functional compatibility without design modification.