DMT6030LFDF-13

$0.17

Description：MOSFET N-CH 60V 6.8A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:08dfbfa78ea1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 6.8A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：25.5mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：639 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：860mW (Ta), 9.62W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMT6030LFDF-13

Overview

The DMT6030LFDF-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 60 V and a continuous drain current (I_D) of 6.8 A at +25°C ambient temperature. The device exhibits a maximum on-resistance (R_DS(ON)) of 25.5 mΩ at V_GS = 10 V and 35 mΩ at V_GS = 4.5 V. Total power dissipation reaches 0.86 W at +25°C ambient or 9.62 W at +25°C case temperature. It operates within a junction temperature range of -55°C to +150°C and utilizes a U-DFN2020-6 package.

Feature Summary

100% Unclamped Inductive Switching (UIS) tested in production for enhanced reliability
Low profile design with a 0.6 mm height suitable for space-constrained applications
Totally lead-free, fully RoHS compliant, and halogen/antimony free construction

Applications

Load switching circuits
Adaptor switch implementations
Notebook PC power management

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required reel quantity of 10,000 units per manufacturer specifications. Confirm that the U-DFN2020-6 Type F package dimensions align with the target PCB footprint layout. Ensure compliance requirements match the documented RoHS 2, RoHS 3, and halogen-free status for the intended market regulations.

Selection Notes

Select this component when a compact N-channel MOSFET with low on-resistance is required for high-efficiency power management. The device supports both 4.5 V and 10 V gate drive levels, offering flexibility in logic-level interfacing. Consider the thermal resistance values relative to the expected PCB copper area and mounting conditions to ensure safe operating area limits are not exceeded during operation.

Part Context

This part belongs to the DMT6030 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The product line targets applications requiring robust end-use reliability through rigorous UIS testing protocols.

Replacement Considerations

The datasheet lists DMT6030LFDF-7 as an equivalent part number differing only in packaging quantity (3,000 units per reel). No other substitute part numbers are explicitly confirmed in the provided documentation.