DMT6030LFDF-7

$0.20

Description：MOSFET N-CH 60V 6.8A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:812d6175dd00 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 6.8A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：25.5mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：639 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：860mW (Ta), 9.62W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMT6030LFDF-7

Overview

The DMT6030LFDF-7 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 6.8A at +25°C. The device offers a low on-resistance (RDS(ON)) of 25.5mΩ at VGS=10V and 35mΩ at VGS=4.5V. Packaged in a U-DFN2020-6 (Type F) case with a 0.6mm profile, it supports a junction temperature range of -55°C to +150°C.

Feature Summary

Designed for high-efficiency power management applications with minimized on-state resistance and superior switching performance.
Manufactured with a 0.6mm profile suitable for low-profile applications and utilizes a PCB footprint of 4mm².
Production includes 100% Unclamped Inductive Switch (UIS) testing to ensure reliability and robustness.

Applications

Load Switch
Adaptor Switch
Notebook PC

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm reel quantity and packaging type. Confirm RoHS compliance status and environmental declarations directly from the manufacturer's datasheet or quality statements before procurement. Ensure the component meets all required electrical specifications for the intended application environment.

Selection Notes

Select this component for designs requiring a compact surface-mount solution with low conduction losses. Evaluate thermal dissipation requirements based on the specified power dissipation ratings and thermal resistance values. Consider the gate threshold voltage characteristics for compatibility with the driving logic levels in the target circuit design.

Part Context

This part belongs to the DMT6030LFDF series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is housed in a U-DFN2020-6 package, which provides a small form factor ideal for space-constrained electronics. The series is engineered to balance low on-resistance with efficient switching capabilities.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified equivalent parts. Cross-reference key parameters such as BVDSS, ID, RDS(ON), and package dimensions when evaluating potential substitutes.