DMT615MLFV-13

$0.20

Description：MOSFET N-CH 60V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:553f5ae2193c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：8.5A (Ta), 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1039 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.76W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8 (Type UX)
Package / Case：8-PowerVDFN

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DMT615MLFV-13

Overview

The DMT615MLFV-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 (Type UX) surface-mount package. The device features a maximum drain-source breakdown voltage of 60V and a gate-source voltage rating of ±20V. At VGS = 10V, the static drain-source on-resistance is 16mΩ max with a continuous drain current of 38A at TC = +25°C. At VGS = 4.5V, the resistance is 26mΩ max with a current of 29.8A. Total power dissipation is 1.76W at TA = +25°C and 34.72W at TC = +25°C. Operating temperature range is -55°C to +150°C.

Feature Summary

Designed for high efficiency power management applications with minimized on-state resistance and superior switching performance.
Features 100% unclamped inductive switching testing in production to ensure robust end application reliability.
Small form factor thermally efficient package enables higher density products while occupying only 33% of the board area compared to SO-8 packages.
Includes an internal ESD protected gate diode.

Applications

Motor Control
DC-DC Converters
Power Management

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS 3 compliance standards and is halogen and antimony free. Ensure the PowerDI3333-8 (Type UX) footprint matches the design layout requirements before finalizing procurement.

Selection Notes

Select this component for designs requiring a compact solution with low conduction losses. The device supports both 4.5V and 10V logic-level gate drive voltages. Consider the thermal resistance values when designing heat dissipation strategies for high-current applications. Verify compatibility with the target PCB substrate copper weight for accurate thermal modeling.

Part Context

This part belongs to the DMT615 series of N-channel MOSFETs from Diodes Incorporated. It is specifically packaged in the PowerDI3333-8 (Type UX) case style. The product summary indicates it is designed to balance low RDS(ON) with fast switching characteristics suitable for modern power management circuits.

Replacement Considerations

The datasheet lists DMT615MLFV-7 as an alternative part number within the same family, differing only in the packaging quantity (2,000 units per tape and reel). No other substitute part numbers are documented in the provided source material.