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Product Detailed Parameters
- Description：MOSFET N-CH 60V PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：8.5A (Ta), 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：16mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1039 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.76W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI3333-8 (Type UX)
- Package / Case：8-PowerVDFN
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Overview
The DMT615MLFV-7 is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type UX) package. It features a drain-source voltage of 60V and a maximum continuous drain current of 38A at TC = +25°C. The device offers a low on-state resistance of 16mΩ max at VGS = 10V and 26mΩ max at VGS = 4.5V. Total gate charge is 15.5nC max at VGS = 10V. Thermal characteristics include a junction-to-case thermal resistance of 3.6°C/W and an operating temperature range of -55°C to +150°C.
Feature Summary
- Designed for high efficiency power management applications with minimized on-state losses
- Small form factor thermally efficient package enables higher density end products
- Occupies just 33% of the board area occupied by SO-8 packages
- Features ESD protected gate and 100% unclamped inductive switching testing
Applications
- Motor Control
- DC-DC Converters
- Power Management
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. The DMT615MLFV-7 variant is supplied in tape and reel packaging with a quantity of 2,000 units per reel. Confirm compliance requirements such as RoHS and halogen-free status directly with the manufacturer's latest product specifications before procurement.
Selection Notes
Select this component when designing circuits requiring a compact N-channel MOSFET with a 60V rating. The PowerDI3333-8 package provides significant board space savings compared to traditional SO-8 footprints while maintaining robust thermal performance. Ensure the application operates within the specified gate-source voltage limits and accounts for the thermal resistance values provided in the datasheet.
Part Context
This part belongs to the DMT series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. These devices are engineered to balance low on-state resistance with superior switching performance. The series utilizes advanced silicon technology to deliver high reliability in small surface-mount packages suitable for modern electronic designs.
Replacement Considerations
Consult the official Diodes Incorporated datasheet or contact technical support for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' components without verifying pinout, electrical ratings, and package dimensions.
