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Product Detailed Parameters
- Description：MOSFET N-CH 60V 10A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：14mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：785 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.39W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOP
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMT616MLSS-13 is a 60V N-channel enhancement mode MOSFET in an SO-8 surface-mount package. It features a maximum drain-source voltage of 60V and continuous drain current ratings of 10A at +25°C and 8.1A at +70°C. The device exhibits low on-state resistance, specified as 14mΩ max at VGS=10V and 21mΩ max at VGS=4.5V. Total gate charge is 13.6nC at VGS=10V. Thermal characteristics include a junction-to-ambient thermal resistance of 90.1°C/W on FR-4 PCBs. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- 100% Unclamped Inductive Switching (UIS) tested in production for robustness
- Totally lead-free and fully RoHS compliant with halogen and antimony free green compound
- Designed for high conversion efficiency and fast switching speed
Applications
- High-frequency switching
- Synchronous rectification
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2500 units per reel. Confirm that the component meets the required environmental standards, specifically RoHS 2/3 compliance and the defined halogen and antimony-free criteria. Ensure the selected SO-8 package dimensions align with the target PCB footprint layout requirements.
Selection Notes
Select this component when a 60V rating and low RDS(ON) are required for power management circuits. Consider the SO-8 package constraints regarding thermal dissipation and available board space. Evaluate the gate charge specifications against the driving circuit capabilities to ensure optimal switching performance and minimize switching losses in the application design.
Part Context
This part belongs to the DMT616 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series is engineered to provide superior switching performance while minimizing on-state resistance. The MLSS variant utilizes a standard SO-8 case material constructed from molded plastic with a UL flammability classification rating of 94V-0.
Replacement Considerations
Consult official manufacturer substitution guides or cross-reference databases for verified equivalent parts. Do not assume functional interchangeability based solely on matching voltage and current ratings without verifying pinout compatibility and detailed electrical parameter alignment.
FAQ
What is the maximum pulsed drain current capability?
The maximum pulsed drain current is 70A, measured with a 10µs pulse duration and a duty cycle of 1%.
Is the device suitable for use in life support systems?
No, Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without express written approval.
