DMT62M7SPSW-13

$0.60

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:160a63edfdf0 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：163A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：68.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4973 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMT62M7SPSW-13

Overview

The DMT62M7SPSW-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a low on-state resistance (RDS(ON)) of 2.7mΩ at VGS=10V. The device supports a continuous drain current (ID) of 163A at TC=+25°C and a pulsed drain current (IDM) of 650A. Packaged in a PowerDI5060-8/SWP format with a profile under 1.1mm, it offers a thermal resistance from junction to case (RθJC) of 1°C/W.

Feature Summary

100% Unclamped Inductive Switching (UIS) tested in production for enhanced reliability
Thermally efficient package design enabling cooler running applications
Low RDS(ON) characteristics that minimize on-state power losses
Lead-free finish compliant with RoHS standards and free of halogen and antimony

Applications

Switching circuits
Synchronous rectifications
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as defined in the official datasheet. Confirm that the component meets the required environmental specifications, including RoHS compliance and Halogen/Antimony-free status, before finalizing procurement orders.

Selection Notes

Select this component for high-efficiency power management designs requiring low conduction losses. Ensure the application operates within the specified 60V drain-source voltage limit and respects the 163A continuous current rating at the appropriate case temperature. Verify that the PCB layout accommodates the PowerDI5060-8 package dimensions and thermal requirements.

Part Context

This part belongs to the Diodes Incorporated MOSFET product line, specifically designed for high-current applications. It utilizes silicon technology and is housed in the PowerDI®5060-8/SWP (Type UX) surface-mount package. The device is intended for use in environments ranging from -55°C to +150°C junction temperature.