DMT63M5LFG-13

$0.36

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:7398613467ab Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：21A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2378 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.83W (Ta), 52.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMT63M5LFG-13

Overview

The DMT63M5LFG-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 package to deliver high current handling with low on-state resistance. Key electrical parameters include a drain-source breakdown voltage of 60V, a maximum continuous drain current of 90A at TC=+25°C, and a static drain-source on-resistance of 3.8mΩ at VGS=10V. The device features a total gate charge of 41.8nC at VGS=10V and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

100% Unclamped Inductive Switching (UIS) tested in production for enhanced reliability
Low RDS(ON) minimizes on-state power losses
Small form factor thermally efficient package enables higher density designs
Occupies 33% of the board area compared to SO-8 packages

Applications

Synchronous rectification
Motor controls
DC-DC converters
Power management

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm RoHS compliance status and environmental declarations such as halogen-free or antimony-free classifications directly from the manufacturer's datasheet before procurement. Ensure the selected variant matches the required thermal and electrical specifications for the target application.

Selection Notes

Select this component when high efficiency and compact footprint are critical requirements. Evaluate the thermal performance based on the specific mounting conditions and copper area available on the PCB. Consider the gate charge characteristics for switching frequency optimization. Verify that the continuous and pulsed current ratings align with the peak load demands of the system design.

Part Context

This part belongs to the DMT series of N-channel MOSFETs designed for high-efficiency power management applications. It is housed in the PowerDI3333-8 package, which provides a small footprint with improved thermal dissipation capabilities compared to traditional surface mount packages. The series targets applications requiring robust performance in space-constrained environments.

Replacement Considerations

For automotive applications requiring specific change control, refer to the related automotive grade parts with the Q-suffix. Consult the manufacturer's product listing for compatible alternatives that meet AEC-Q100/101/104/200 qualifications and PPAP capabilities if operating in regulated automotive supply chains.

FAQ

Is the DMT63M5LFG-13 qualified for automotive applications?

This specific part number is qualified to JEDEC standards for high reliability. For automotive applications requiring specific change control and AEC-Q qualification, customers should refer to the related automotive grade parts with the Q-suffix.