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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：21A (Ta), 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：41.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2378 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.83W (Ta), 52.7W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMT63M5LFG-7 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 surface-mount package. The device features a maximum drain-source breakdown voltage (BVDSS) of 60V and a continuous drain current (ID) of 90A at TC = +25°C. The static drain-source on-resistance (RDS(ON)) is specified as 3.8mΩ max at VGS = 10V and 6.0mΩ max at VGS = 4.5V. Total gate charge (Qg) is 41.8nC at VGS = 10V. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- 100% Unclamped Inductive Switching (UIS) tested in production for robustness
- Low RDS(ON) design minimizes on-state power losses
- Small form factor thermally efficient package enables higher density end products
- Occupies 33% of board area compared to SO-8 packages
Applications
- Synchronous rectification
- Motor controls
- DC-DC converters
- Power management
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm datasheet revision DS41719 Rev. 4 matches the delivered product. Ensure compliance with RoHS, REACH, and halogen-free requirements if mandated by project specifications. Validate thermal performance against application-specific PCB copper layout constraints.
Selection Notes
Select this component when high efficiency and compact footprint are required. Suitable for applications demanding low conduction losses at 60V ratings. Verify gate drive voltage compatibility with the specified RDS(ON) thresholds. Consider thermal resistance values relative to the intended heat dissipation environment.
Part Context
Part of the DMT series of N-channel enhancement mode MOSFETs designed for high-efficiency power management. Manufactured using silicon technology in the PowerDI3333-8 package. Qualified to JEDEC standards for high reliability. Lead finish is matte tin annealed over copper leadframe.
Replacement Considerations
Consult manufacturer documentation for automotive-grade alternatives with Q-suffixes. Verify pinout and electrical parameters match before substituting with other 60V N-channel MOSFETs in PowerDI3333-8 packages.
