DMT64M1LCG-13

$0.37

Description：MOSFET BVDSS: 61V~100V V-DFN3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:4c0361ec98af Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V V-DFN3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：65 V
Current - Continuous Drain (Id) @ 25°C：16.7A (Ta), 67.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：51.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2626 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：V-DFN3333-8 (Type B)
Package / Case：8-PowerVDFN

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DMT64M1LCG-13

Overview

The DMT64M1LCG-13 is a 65V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a V-DFN3333-8 (Type B) case with NiPdAu terminal finish over a copper leadframe. The device provides a maximum drain-source on-resistance of 5.4mΩ at VGS=10V and 7.3mΩ at VGS=4.5V. Continuous drain current reaches 67.8A at TC=+25°C, while pulsed drain current is rated at 260A. Avalanche energy capability is 206mJ at L=1mH. Thermal resistance from junction to case is 3.0°C/W.

Feature Summary

100% unclamped inductive switching (UIS) tested in production for robustness
Totally lead-free and fully RoHS compliant construction
Halogen and antimony free green device configuration

Applications

Synchronous rectifier circuits
Notebook battery power management systems
Load switch applications
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000 units per tape and reel packaging format. Confirm that the V-DFN3333-8 Type B mechanical dimensions match the target PCB footprint requirements. Ensure compliance with J-STD-020 moisture sensitivity level 1 handling protocols during assembly processes.

Selection Notes

Select this component when low on-state losses are critical alongside superior switching performance. Evaluate thermal constraints against the 3.0°C/W junction-to-case resistance rating. Consider the 65V breakdown voltage margin relative to system operating voltages. Verify gate threshold voltage compatibility with available drive logic levels.

Part Context

This part belongs to the DMT64M1LCG series of N-channel enhancement mode MOSFETs. It utilizes the PowerDI package family technology designed for high efficiency power management functions. The device represents a newer generation optimized to minimize RDS(ON) while maintaining fast switching speeds.