DMT64M1LCG-7

$0.38

Description：MOSFET BVDSS: 61V~100V V-DFN3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:da9db33efa61 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V V-DFN3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：65 V
Current - Continuous Drain (Id) @ 25°C：16.7A (Ta), 67.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：51.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2626 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：V-DFN3333-8 (Type B)
Package / Case：8-PowerVDFN

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DMT64M1LCG-7

Overview

The DMT64M1LCG-7 is a 65V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a V-DFN3333-8 (Type B) case with a maximum drain-source voltage of 65V and a gate-source voltage rating of ±20V. The device exhibits a maximum on-resistance of 5.4mΩ at VGS=10V and 7.3mΩ at VGS=4.5V, supporting continuous drain currents up to 67.8A at TC=+25°C. Key electrical parameters include a total gate charge of 51.4nC at VGS=10V, an input capacitance of 2626pF, and a turn-on delay time of 11.5ns. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

Designed for low on-state losses while maintaining superior switching performance
Manufactured using silicon technology in a lead-free, RoHS compliant package
Features high conversion efficiency and fast switching speed capabilities

Applications

Notebook battery power management
Load switch applications
Synchronous rectifier circuits
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 2,000-unit tape and reel packaging configuration. Confirm that the required component meets all applicable environmental directives, including RoHS 3 compliance and halogen/antimony-free standards. Ensure the selected part matches the exact V-DFN3333-8 (Type B) mechanical dimensions specified in the official datasheet.

Selection Notes

Select this component when a 65V N-channel MOSFET with optimized RDS(ON) and switching characteristics is required. Consider the thermal resistance values and power dissipation limits relative to the intended PCB copper area and ambient operating conditions. Evaluate the gate charge requirements against the driving circuit capabilities to ensure adequate switching speeds.

Part Context

This component belongs to the DMT series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes the V-DFN3333-8 surface-mount package designed for efficient heat dissipation through the exposed drain pad. The product line targets portable electronics and power management systems requiring robust performance in compact form factors.

Replacement Considerations

DMT64M1LCG-13

FAQ

Is the DMT64M1LCG-7 qualified for automotive applications?

For automotive applications requiring AEC-Q100/101/200 qualification or IATF 16949 manufacturing, customers must contact Diodes Incorporated directly.