DMT64M1LPSW-13

$0.34

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:59a3d78fb8d1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：65 V
Current - Continuous Drain (Id) @ 25°C：21.8A (Ta), 81.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：51.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2626 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.14W (Ta), 44W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMT64M1LPSW-13

Overview

The DMT64M1LPSW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 (SWP) surface-mount package and operates with a drain-source voltage rating of 65V. The device features a maximum on-resistance of 4.4mΩ at VGS=10V and 6.3mΩ at VGS=4.5V, supporting continuous drain currents up to 81.7A at case temperatures of +25°C. Key electrical parameters include a gate threshold voltage ranging from 1.3V to 2.5V, total gate charge of 51.4nC at VGS=10V, and a junction-to-case thermal resistance of 2.84°C/W. The component is designed for high-efficiency power management applications.

Feature Summary

Features wettable flank terminals to facilitate improved optical inspection during manufacturing.
Includes 100% unclamped inductive switching (UIS) testing in production to ensure robust end-application reliability.
Designed to minimize both static on-state resistance and dynamic gate charge for reduced power and switching losses.
Constructed using lead-free, halogen-free, and antimony-free materials compliant with RoHS directives.

Applications

High-frequency switching circuits
Synchronous rectification modules
DC-DC converter topologies

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration when sourcing components. Confirm that the required operating temperature range aligns with the specified -55°C to +150°C limits. Ensure PCB layout accommodates the exposed drain pad thermal requirements for optimal heat dissipation performance.

Selection Notes

Select this component for designs requiring low conduction losses within a 65V system architecture. Evaluate the thermal resistance characteristics against the expected ambient conditions and duty cycles. Consider the gate charge specifications when designing drive circuits to optimize switching speed and efficiency.

Part Context

This part belongs to the DMTH/DMT series of N-channel MOSFETs produced by Diodes Incorporated. It is housed in the PowerDI5060-8 package, which provides a compact footprint with enhanced thermal capabilities compared to standard surface-mount packages. The series targets modern power management solutions requiring high current density.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure functional compatibility without design modification.