DMT64M8LCG-7

$1.26

Description：MOSFET BVDSS: 61V~100V V-DFN3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:395ad0955675 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V V-DFN3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：16.1A (Ta), 77.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：47.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2664 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：990mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：V-DFN3333-8 (Type B)
Package / Case：8-PowerVDFN

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DMT64M8LCG-7

Overview

The DMT64M8LCG-7 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a V-DFN3333-8 (Type B) case with a maximum drain-source voltage of 60V and a gate-source voltage rating of ±20V. The device exhibits a low on-resistance of 4.8mΩ at VGS=10V and 6.5mΩ at VGS=4.5V, supporting continuous drain currents up to 77.8A at TC=+25°C. Key electrical parameters include a total gate charge of 47.5nC at VGS=10V, an input capacitance of 2664pF, and a junction-to-case thermal resistance of 2.5°C/W. Operating temperatures range from -55°C to +150°C.

Feature Summary

Features 100% unclamped inductive switching (UIS) testing for enhanced reliability.
Incorporates ESD protection on the gate terminal.
Utilizes a lead-free, fully RoHS compliant package construction.

Applications

Notebook battery power management
Load switch circuits
Synchronous rectifier designs
DC-DC converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets all required environmental compliance standards for your target market. Ensure the procurement channel is authorized to guarantee product authenticity and traceability. Cross-reference the date code and marking information with the manufacturer's latest guidelines.

Selection Notes

Select this component when a low on-resistance and high current capability are required within a compact surface-mount footprint. Consider the thermal resistance characteristics and the need for adequate copper area on the PCB for optimal heat dissipation. Evaluate the gate charge requirements against the driving circuit capabilities to ensure efficient switching performance.

Part Context

This part belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state losses while maintaining superior switching performance. The series utilizes advanced silicon technology to provide robust solutions for power management applications requiring high efficiency and reliability.

Replacement Considerations

Consult the official datasheet or contact Diodes Incorporated directly for verified substitute part numbers. Do not assume cross-compatibility based solely on similar voltage or current ratings without verifying pinout and thermal characteristics.

FAQ

Is the DMT64M8LCG-7 suitable for automotive applications?

For automotive applications requiring specific change control, AEC-Q qualification, or PPAP capability, customers must contact Diodes Incorporated or their local representative directly.