DMT67M8LCG-13

$0.33

Description：MOSFET N-CH 60V 16A/64.6A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:08ebebc6032a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 16A/64.6A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：16A (Ta), 64.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：37.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2130 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：V-DFN3333-8 (Type B)
Package / Case：8-PowerVDFN

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DMT67M8LCG-13

Overview

The DMT67M8LCG-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a V-DFN3333-8 case and utilizes silicon technology. Key electrical parameters include a drain-source breakdown voltage of 60V, a continuous drain current of 16A at TA=+25°C, and a maximum on-resistance of 5.7mΩ at VGS=10V. The device supports a gate-source voltage range of ±20V and operates within a temperature range of -55°C to +150°C.

Feature Summary

Designed to minimize on-state losses while maintaining superior switching performance.
Features an ESD protected gate for enhanced reliability.
Compliant with RoHS directives and halogen/antimony-free standards.

Applications

Notebook battery power management
Load switch applications
Synchronous rectifier circuits
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental compliance standards, specifically RoHS and lead-free specifications, as defined in the manufacturer's documentation before finalizing procurement orders.

Selection Notes

Select this component for designs requiring low on-resistance and high conversion efficiency in compact form factors. Ensure the application environment stays within the specified operating temperature range and that the thermal management strategy accounts for the junction-to-ambient resistance characteristics provided in the datasheet.

Part Context

This part belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed for general-purpose power switching applications where minimizing conduction losses is critical. The V-DFN3333-8 package provides a compact solution suitable for space-constrained electronic designs.

Replacement Considerations

The DMT67M8LCG-7 is a verified substitute part number offering identical electrical characteristics but packaged in a 2,000-unit tape and reel format. Verify pinout compatibility and thermal requirements when substituting between these packaging variants.