DMT67M8LCGQ-13

$0.37

Description：MOSFET N-CH 60V 16A/64.6A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:6ddf631de4e6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 16A/64.6A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：16A (Ta), 64.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：37.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2130 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：900mW (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：V-DFN3333-8 (Type B)
Package / Case：8-PowerVDFN

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DMT67M8LCGQ-13

Overview

The DMT67M8LCGQ-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a V-DFN3333-8 (Type B) package and meets AEC-Q101 automotive qualification standards with PPAP capability. Key electrical parameters include a drain-source breakdown voltage of 60V, a maximum continuous drain current of 16A at +25°C ambient temperature, and a static drain-source on-resistance of 5.7mΩ at VGS=10V. The device supports a total power dissipation of 0.9W at +25°C ambient and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Qualified for automotive applications under AEC-Q101 standards with PPAP capability.
Features 100% unclamped inductive switching (UIS) testing in production for robustness.
Includes an ESD protected gate structure.

Applications

Synchronous Rectifier
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix when purchasing. The datasheet lists DMT67M8LCGQ-7 and DMT67M8LCGQ-13 as distinct part numbers corresponding to different tape and reel packaging quantities. Confirm that the required quantity matches the specific suffix to ensure correct packaging specifications are received.

Selection Notes

Select this component for designs requiring automotive-grade reliability and low on-state resistance. The V-DFN3333-8 package provides a compact footprint suitable for space-constrained layouts. Ensure thermal management accounts for the specified thermal resistance values to maintain operation within the safe operating area limits defined in the datasheet.

Part Context

This component belongs to the DMT67M8LCGQ series of 60V N-channel MOSFETs from Diodes Incorporated. It is designed specifically for high-efficiency power switching applications where automotive compliance is mandatory. The product utilizes a molded plastic case material classified as UL 94V-0 flammability rating.