DMT67M8LCGQ-7

$0.39

Description：MOSFET N-CH 60V 16A/64.6A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:64a89a744cca Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 16A/64.6A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：16A (Ta), 64.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：37.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2130 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：900mW (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：V-DFN3333-8 (Type B)
Package / Case：8-PowerVDFN

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DMT67M8LCGQ-7

Overview

The DMT67M8LCGQ-7 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a V-DFN3333-8 (Type B) package and meets AEC-Q101 automotive qualification standards with PPAP capability. Key electrical parameters include a maximum drain-source voltage of 60V, a continuous drain current of 16A at +25°C ambient temperature, and a static drain-source on-resistance of 5.7mΩ at VGS=10V. The device supports a total power dissipation of 900mW and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

100% Unclamped Inductive Switching (UIS) tested in production for enhanced reliability
Low RDS(ON) characteristics designed to minimize on-state losses
ESD protected gate structure
Totally lead-free and fully RoHS compliant

Applications

Synchronous Rectifier
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets the required AEC-Q101 qualification and PPAP requirements for your intended automotive application. Ensure compatibility with IATF16949:2016 certified manufacturing facilities if specified by your design constraints.

Selection Notes

Select this component for applications requiring robust automotive-grade performance and low conduction losses. Consider the thermal resistance and power dissipation limits relative to your system's cooling capabilities. Evaluate the gate charge and switching speeds against your driver circuit requirements to ensure optimal efficiency in high-frequency switching environments.

Part Context

This part belongs to the DMT67M8LCGQ series of 60V N-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a V-DFN3333-8 case. The product line is designed to meet stringent automotive industry standards, offering a balance of high current handling and low on-resistance in a compact surface-mount footprint.