DMT67M8LK3-13

$0.30

Description：MOSFET BVDSS: 41V~60V TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:9f9aecb24924 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：87A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：37.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2130 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 89.3W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMT67M8LK3-13

Overview

The DMT67M8LK3-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO252 (DPAK) case and is supplied in tape and reel packaging with a quantity of 2500 units. The device provides a maximum drain-source breakdown voltage of 60V and a continuous drain current of 87A at 25°C case temperature. Its static drain-source on-resistance is specified as a maximum of 7mΩ at VGS=10V and 10mΩ at VGS=4.5V. Total gate charge is 37.5nC at VGS=10V.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
Features an ESD protected gate structure to enhance reliability during handling and operation.
Manufactured using lead-free finish materials that are RoHS compliant, halogen free, and antimony free.

Applications

Power Management Functions
DC-DC Converters
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required 2500-unit tape and reel packaging configuration. Confirm that the TO252 (DPAK) package dimensions align with your PCB footprint requirements. Ensure the component meets all applicable environmental directives relevant to your manufacturing region before finalizing procurement.

Selection Notes

Select this component when a 60V rating and low on-resistance are required for efficient power switching. Evaluate the thermal characteristics against your system's heat dissipation capabilities, noting the junction-to-case thermal resistance. Consider the gate threshold voltage range to ensure compatibility with your intended drive circuitry logic levels.

Part Context

This part belongs to the DMT67M8LK3 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology within a TO252 (DPAK) surface-mount package. The product line is designed specifically for applications demanding minimized power losses and robust switching performance in compact form factors.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching critical electrical parameters such as voltage ratings, current capacity, and package type to ensure functional equivalence without compromising system safety or performance.

FAQ

Is the DMT67M8LK3-13 suitable for automotive applications?

For automotive applications requiring specific change control, AEC-Q100/101/200 qualification, PPAP capability, and manufacturing in IATF 16949 certified facilities, contact Diodes Incorporated directly.