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Product Detailed Parameters
- Description：MOSFET N-CH 60V 17.3A/82A PWRDI
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：17.3A (Ta), 82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：37.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2130 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta), 62.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8 (Type Q)
- Package / Case：8-PowerTDFN
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Overview
The DMT67M8LPSW-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI5060-8/SWP packaging and silicon technology. Key electrical parameters include a drain-source breakdown voltage of 60V, a maximum continuous drain current of 17.3A at 25°C ambient temperature, and a static drain-source on-resistance of 6.2mΩ at VGS=10V. The device features a gate-source voltage rating of ±20V, total gate charge of 37.5nC at VGS=10V, and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Features wettable flanks for improved optical inspection capabilities
- Includes an integrated ESD protected gate structure
- Manufactured with lead-free finish and complies with RoHS directives
- Guaranteed 100% unclamped inductive switching (UIS) test in production
Applications
- Synchronous rectifiers
- DC-DC converters
- Power management systems
Procurement Notes
Verify the specific package variant (Type Q or Type UX) required for your design, as both are available under the same part number. Confirm compliance with environmental standards such as RoHS and REACH requirements before finalizing procurement. Ensure that the ordering suffix matches the intended tape and reel packing quantity of 2500 units.
Selection Notes
Select this component when low on-state resistance and fast switching speeds are critical for high-efficiency power management applications. Consider the thermal characteristics and safe operating area limits during circuit design. Evaluate the gate threshold voltage and total gate charge to ensure compatibility with the intended driver circuitry for optimal performance.
Part Context
This MOSFET belongs to the DMT series from Diodes Incorporated, designed for general-purpose power switching. It is housed in the PowerDI5060-8 surface-mount package, which provides a compact footprint suitable for space-constrained designs. The device is engineered to minimize conduction losses while maintaining robust switching performance.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing should be performed carefully to ensure equivalent electrical ratings and pin configurations match the original design requirements.
