DMT68M8LFV-13

$0.24

Description：MOSFET N-CH 60V 54.1A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:2d89d84730f5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 54.1A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：54.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9.5mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2078 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.7W (Ta), 41.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8 (Type UX)
Package / Case：8-PowerVDFN

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DMT68M8LFV-13

Overview

The DMT68M8LFV-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 package and operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a maximum drain-source voltage (BVDSS) of 60V, a continuous drain current (ID) of 54.1A at TC = +25°C, and a static drain-source on-resistance (RDS(ON)) of 9.5mΩ at VGS = 10V. The device features a gate threshold voltage (VGS(TH)) ranging from 1V to 3V, a total gate charge (Qg) of 30nC at VGS = 10V, and a maximum continuous body diode forward current (IS) of 50A.

Feature Summary

Features 100% unclamped inductive switching (UIS) testing in production to ensure robust end application reliability.
Designed with low RDS(ON) characteristics to minimize on-state power losses during operation.
Incorporates an ESD protected gate structure for enhanced circuit protection.
Utilizes a thermally efficient small form factor package that occupies significantly less board area than SO-8 packages.

Applications

Motor Control
DC-DC Converters
Power Management

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 3000 units per the manufacturer's documentation. Confirm that the PowerDI3333-8 case type matches the intended PCB footprint requirements. Ensure compliance with RoHS and halogen-free specifications if mandated by the final assembly standards. Cross-reference the datasheet revision number to validate all thermal and electrical limits against the latest official release.

Selection Notes

Select this component when a 60V rating and high continuous current capability are required in a compact surface-mount footprint. Evaluate the thermal resistance values relative to the expected ambient conditions and copper pad layout. Consider the gate charge and threshold voltage specifications to ensure compatibility with the driving logic levels. Verify that the package dimensions align with the automated pick-and-place equipment capabilities.

Part Context

This part belongs to the DMT series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is specifically engineered for high-efficiency power management applications where minimizing conduction losses is critical. The device represents a transition toward smaller footprints while maintaining high current handling capabilities through advanced silicon technology and optimized package design.

Replacement Considerations

Consult the manufacturer's official documentation for verified equivalent part numbers or direct replacements. Do not substitute based solely on matching voltage and current ratings without verifying pinout compatibility and thermal performance characteristics.