DMT69M5LCG-7

Overview

The DMT69M5LCG-7 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes a V-DFN3333-8 (Type B) surface-mount package. The device features a maximum drain-source breakdown voltage of 60V and a continuous drain current rating of 52.1A at a case temperature of +25°C. At VGS = 10V, the static drain-source on-resistance is typically 6.1mΩ with a maximum of 8.3mΩ. At VGS = 4.5V, the resistance is typically 8.7mΩ with a maximum of 12.5mΩ. The gate threshold voltage ranges from 1.4V to 2.5V. Total gate charge is 28.4nC at VGS = 10V and 15.4nC at VGS = 4.5V. Operating junction temperature spans -55°C to +150°C.

Feature Summary

• Designed for low on-state losses while maintaining superior switching performance.
• Manufactured using silicon technology in a lead-free, RoHS compliant, halogen-free, and antimony-free green package.
• Verified for reliability through 100% unclamped inductive switching testing during production.

Applications

• Notebook battery power management
• Load switch circuits
• Synchronous rectifier designs
• DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. The -7 suffix indicates a tape and reel configuration containing 2,000 units per reel. Confirm that the component meets all applicable environmental directives, including RoHS 2 and RoHS 3 compliance standards, before finalizing procurement specifications.

Selection Notes

Select this component when a compact V-DFN3333-8 footprint is required for high-current applications up to 52.1A. Ensure the driving circuit can provide sufficient gate voltage to achieve the lowest possible on-resistance values. Verify thermal management capabilities against the specified junction-to-ambient and junction-to-case thermal resistance parameters.

Part Context

This part belongs to the DMT series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. These devices are engineered to minimize conduction losses without compromising switching speed. The product line targets portable electronics and power management systems requiring efficient energy conversion within small form factors.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching critical electrical parameters such as breakdown voltage, on-resistance, and package dimensions to ensure functional compatibility.

FAQ

Is the DMT69M5LCG-7 suitable for automotive applications?

For automotive applications requiring specific change control or qualification to AEC-Q100/101/200 standards, customers must contact Diodes Incorporated directly.

What is the maximum pulsed drain current capability?

The device supports a pulsed drain current of 208A with a 10µs pulse duration and a duty cycle of 1%.