DMT69M5LFVW-7

$0.25

Description：MOSFET BVDSS: 41V~60V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:ab34fe01e786 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：14.8A (Ta), 40.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.3mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：28.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1406 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.74W (Ta), 20.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMT69M5LFVW-7

Overview

The DMT69M5LFVW-7 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 package and features an on-resistance of 8.3mΩ at VGS=10V with a continuous drain current of 40.6A at TC=25°C. The device supports a gate-source voltage of ±20V, operates within a temperature range of -55°C to +150°C, and includes a maximum power dissipation of 2.74W at TA=25°C.

Feature Summary

100% Unclamped Inductive Switching (UIS) tested in production for enhanced reliability
Low on-resistance combined with superior switching performance
Small form factor thermally efficient package enables higher density end products
Wettable flank design facilitates improved optical inspection

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets all required environmental standards, including RoHS compliance and halogen-free specifications. Ensure the intended application environment aligns with the specified thermal and electrical operating limits defined in the datasheet.

Selection Notes

Select this component when high-efficiency power management is required alongside space constraints. The low on-resistance minimizes conduction losses, while the small package size supports dense circuit layouts. Evaluate thermal requirements carefully, as the package relies heavily on PCB copper area for heat dissipation during operation.

Part Context

This part belongs to the DMTH69 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining robust switching capabilities. The product line targets applications demanding high efficiency and compact physical dimensions in modern electronic designs.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on similar voltage or current ratings without verifying pinout and thermal characteristics.

FAQ

Is the DMT69M5LFVW-7 suitable for automotive applications?

For automotive applications requiring specific change control, AEC-Q100/101/200 qualification, PPAP capability, and manufacturing in IATF 16949 certified facilities, contact Diodes Incorporated directly.