DMT69M5LFVWQ-7

$0.31

Description：MOSFET BVDSS: 41V~60V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:31627b8eb5d3 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：14.8A (Ta), 40.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.3mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：28.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1406 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.74W (Ta), 20.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMT69M5LFVWQ-7

Overview

The DMT69M5LFVWQ-7 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8 packaging and meets AEC-Q101 automotive qualification standards. Key electrical parameters include a maximum drain-source voltage of 60V, a continuous drain current of 40.6A at TC=+25°C, and a static drain-source on-resistance of 8.3mΩ max at VGS=10V. The device supports a gate-source voltage of ±20V and operates within a temperature range of -55°C to +150°C.

Feature Summary

100% Unclamped Inductive Switching (UIS) tested in production for enhanced reliability
Small form factor thermally efficient package enables higher density end products
Wettable flank design facilitates improved optical inspection

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm tape and reel quantities. Confirm that the component meets all required automotive quality standards and environmental compliance specifications before finalizing procurement decisions.

Selection Notes

Select this component when designing circuits requiring a 60V N-channel MOSFET with low on-resistance and high thermal efficiency. Ensure the application environment aligns with the specified operating temperature range and voltage ratings.

Part Context

This part belongs to the DMT series of automotive-grade MOSFETs from Diodes Incorporated. It is designed for applications demanding robust performance and reliability under stringent automotive conditions.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Do not assume interchangeability based solely on similar electrical ratings without confirming pinout and package compatibility.