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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V TO251 TUBE
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：28.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1406 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.3W (Ta), 96W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-251
- Package / Case：TO-251-3 Stub Leads, IPAK
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Overview
The DMT69M5LH3 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a TO251 (Type TH3) package. It features a maximum drain-source voltage of 60V and a gate-source voltage rating of ±20V. The device exhibits a static drain-source on-resistance of 10.5mΩ at VGS=10V and 15mΩ at VGS=4.5V, supporting continuous drain currents of 75A at TC=+25°C and 60A at TC=+70°C. Total power dissipation reaches 96W at TC=+25°C with a thermal resistance junction-to-case of 1.3°C/W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- 100% Unclamped Inductive Switching (UIS) tested in production for robust end applications
- Low on-resistance combined with low input capacitance for high-efficiency switching
- Small form factor thermally efficient package enabling higher density designs
- Lead-free finish compliant with RoHS directives; halogen and antimony free
Applications
- Motor control systems
- Backlighting circuits
Procurement Notes
Verify the specific ordering suffix 'H3' against official Diodes Incorporated documentation to confirm tube packaging details. Confirm that the component meets required environmental standards such as RoHS compliance and halogen-free specifications before finalizing procurement plans.
Selection Notes
Select this component when a 60V N-channel MOSFET with high current handling capability is required. Ensure the application supports the TO251 package dimensions and thermal management requirements. Verify that the gate drive voltage aligns with the specified RDS(ON) thresholds for optimal performance.
Part Context
This part belongs to the Diodes Incorporated MOSFET product line, specifically designed for power management applications. It utilizes silicon technology and is housed in a molded plastic case with matte tin annealed terminals over a copper leadframe. The marking code T69M5L identifies the product type.
Replacement Considerations
Consult official manufacturer substitution guides or contact Diodes Incorporated directly for verified alternative part numbers. Do not assume cross-compatibility based solely on similar electrical ratings without verifying pinout and thermal characteristics.
FAQ
What is the maximum pulsed drain current?
The maximum pulsed drain current is 300A with a 10μs pulse duration and 1% duty cycle.
Is the device suitable for automotive applications?
For automotive applications requiring AEC-Q100/101/200 qualification and IATF 16949 manufacturing, customers must contact Diodes Incorporated or their local representative.
