DMT69M8LSS-13

$0.65

Description：MOSFET N-CH 60V 9.8A 8SO T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:aee11f8cc40c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 9.8A 8SO T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33.5 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：1925 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.25W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMT69M8LSS-13

Overview

The DMT69M8LSS-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 60 V and a continuous drain current (I_D) of 9.8 A at +25°C ambient temperature. The device offers a maximum static drain-source on-resistance (R_DS(ON)) of 12 mΩ at V_GS = 10 V and 14 mΩ at V_GS = 4.5 V. Total gate charge (Q_G) is 33.5 nC at V_GS = 10 V. It operates within a junction temperature range of -55°C to +150°C and is housed in an SO-8 package.

Feature Summary

Designed for high-efficiency power management applications with minimized on-state losses
Features excellent switching performance characterized by low gate-drain charge product
Manufactured using advanced technology optimized for DC-DC converter efficiency
Verified for reliability through 100% unclamped inductive switching (UIS) testing

Applications

Power Management Functions
DC-DC Converters
Backlighting

Procurement Notes

Verify the component datasheet revision, as the document indicates this part is not recommended for new designs. Confirm that the specific ordering suffix matches the required tape and reel packaging quantity. Ensure compliance with RoHS and halogen-free requirements if applicable to the target assembly process.

Selection Notes

Select this component for circuits requiring a 60 V rating with moderate current handling capabilities. Evaluate the thermal resistance values against the expected ambient conditions and PCB copper area. Consider the gate threshold voltage characteristics when designing the drive circuitry for optimal switching transitions.

Part Context

This component belongs to the DMT series of N-channel MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is packaged in an SO-8 case. The manufacturer explicitly recommends using the DMT6012LSS for new designs instead of this specific model.