DMT69M9LPDW-13

$0.37

Description：MOSFET 2N-CH 60V 11A PWRDI50
Series：-

SKU:420acb489613 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 11A PWRDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：11A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs：12.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2212pF @ 30V
Power - Max：2.5W (Ta), 40.3W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：PowerDI5060-8 (Type UXD)
Grade：-
Qualification：-

Download product information

DMT69M9LPDW-13

Overview

The DMT69M9LPDW-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI5060-8/SWP package with wettable flanks for improved optical inspection. The device provides a drain-source voltage of 60V and a continuous drain current of 44A at TC = +25°C. Static drain-source on-resistance is specified as 12.5mΩ at VGS = 10V and 16.8mΩ at VGS = 4.5V. Total gate charge is 33.5nC at VGS = 10V, supporting fast switching performance.

Feature Summary

Dual N-channel configuration designed to minimize on-state resistance while maintaining superior switching performance.
Thermally efficient PowerDI5060-8/SWP package construction that enables cooler running applications.
Wettable flank design facilitates improved optical inspection during manufacturing processes.
Manufactured using totally lead-free materials that are fully RoHS compliant and halogen free.

Applications

Wireless Charging
DC-DC Converters
Power Management

Procurement Notes

Verify the specific ordering suffix -13 corresponds to the required 2500-unit tape and reel packaging format. Confirm that the PowerDI5060-8/SWP case type matches the intended footprint requirements. Ensure compliance with moisture sensitivity level 1 standards per J-STD-020 for storage and handling procedures.

Selection Notes

Select this component when high conversion efficiency and low input capacitance are required for power management circuits. The dual channel architecture allows for compact designs in wireless charging systems. Evaluate thermal resistance characteristics against the specific ambient temperature constraints of the target application environment.

Part Context

This part belongs to the DMTH series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the PowerDI surface mount technology platform which integrates thermal dissipation capabilities directly into the molded plastic case structure.