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Product Detailed Parameters
- Description：MOSFET N-CH 80V 16A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：16A (Ta), 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：37.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2254 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta), 23.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMT8008LFG-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a drain-source voltage (V_DSS) of 80 V and a maximum continuous drain current (I_D) of 48 A at a case temperature of +25°C. The device exhibits a static drain-source on-resistance (R_DS(ON)) of 6.9 mΩ at V_GS = 10 V and 10.4 mΩ at V_GS = 4.5 V. Total gate charge (Q_g) is 37.7 nC at V_GS = 10 V. Operating junction temperatures range from -55°C to +150°C.
Feature Summary
- Advanced technology designed for DC-DC converters with minimized on-state losses
- Small form factor thermally efficient package enabling higher density end products
- Occupies just 33% of the board area occupied by SO-8 packages
- 100% unclamped inductive switching (UIS) tested in production
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. The standard tape and reel configuration contains 2,000 units per reel. Confirm compliance requirements such as RoHS and halogen-free status directly through manufacturer datasheets or quality declarations before finalizing procurement specifications.
Selection Notes
Select this component when designing high-efficiency power management circuits requiring low conduction losses within a compact footprint. Evaluate thermal resistance parameters based on the specific PCB copper layout and ambient conditions. Ensure gate drive voltages align with the specified thresholds for optimal R_DS(ON) performance and switching characteristics.
Part Context
This part belongs to the DMT series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 package, which provides a small physical footprint while maintaining robust thermal dissipation capabilities. The series is engineered to balance low on-resistance with superior switching performance for modern electronic applications.
Replacement Considerations
Consult official manufacturer substitution guides for verified alternatives. Cross-referencing requires matching critical electrical parameters including voltage ratings, current capacity, and package dimensions.
