DMT8008LK3-13

$0.43

Description：MOSFET BVDSS: 61V~100V TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:9962f924233c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 14A, 10V
Vgs(th) (Max) @ Id：2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2345 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：1.7W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMT8008LK3-13

Overview

The DMT8008LK3-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a TO252 (DPAK) package. It features a drain-source voltage of 80V and a maximum continuous drain current of 95A at +25°C case temperature. The device exhibits a low on-resistance of 7.0mΩ at VGS=10V and 11mΩ at VGS=4.5V. Total gate charge is 41.2nC at VGS=10V. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Features low on-resistance to minimize power losses during conduction.
Designed with low gate charge to reduce switching energy consumption.
Manufactured using silicon technology for robust performance.
Includes lead-free finish compliant with RoHS directives.

Applications

Power management functions
DC-DC converters
Backlighting circuits

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per carrier. Confirm that the component meets the required environmental standards, specifically RoHS compliance and halogen-free specifications, as defined by the manufacturer's quality definitions. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.

Selection Notes

Select this component when an 80V rating and high current handling capability are required for surface-mount designs. Evaluate the thermal resistance characteristics against the expected ambient conditions and PCB copper area. Consider the gate threshold voltage requirements relative to the driving logic levels to ensure full enhancement and optimal on-state performance under varying load conditions.

Part Context

This part belongs to the DMT8008 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series utilizes silicon planar trench technology. The standard package variant is the TO252 (DPAK), designed for surface mount applications requiring efficient heat dissipation through the exposed pad connection.

Replacement Considerations

Consult official manufacturer documentation for verified equivalent part numbers. Cross-referencing requires matching critical electrical parameters such as breakdown voltage, on-resistance, and package dimensions to ensure functional compatibility without design modification.